EVIDENCE OF ACCEPTOR-LIKE OXIDE DEFECTS CREATED BY HOT-CARRIER INJECTION IN N-MOSFETS - A CHARGE-PUMPING STUDY

被引：20

作者：

VUILLAUME, D ^{[1
]}

MARCHETAUX, JC ^{[1
]}

BOUDOU, A ^{[1
]}

机构：

[1] BULL SA,DIRECT TECHNOL AVANCEES,F-78340 LES CLAYES BOIS,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 02期

关键词：

D O I：

10.1109/55.75703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge-pumping measurements and simulation of charge-pumping characteristics are used as evidence that acceptor-like oxide traps (negative oxide charges when the traps are filled by electrons) are created in LDD n-channel MOSFET's by hot-carrier injections (HCI's). These oxide traps are located in the gate-drain overlap region and we emphasize how the charge-pumping (CP) technique is able to detect them.

引用

页码：60 / 62

页数：3

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