THE CHARGE PUMPING METHOD - EXPERIMENT AND COMPLETE SIMULATION

[1] A TIME DOMAIN ANALYSIS OF THE CHARGE PUMPING CURRENT [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4751 - 4754

[2] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[3] GROESENEKEN G, 1986, THESIS U LEUVEN

[4] CONSISTENT MODEL FOR THE HOT-CARRIER DEGRADATION IN N-CHANNEL AND P-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2194 - 2209

[5] A SIMPLE TECHNIQUE FOR DETERMINING THE INTERFACE-TRAP DISTRIBUTION OF SUB-MICRON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY THE CHARGE PUMPING METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1358 - 1360

[6] POORTER T, 1984, 1984 IEDM, P100

[7] THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2493 - 2500

[8] MOS DEVICE MODELING AT 77-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (08) : 1464 - 1474

[9] SELBERHERR S, 1984, ANAL SIMULATION SEMI, pCH6

[1] A TIME DOMAIN ANALYSIS OF THE CHARGE PUMPING CURRENT [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4751 - 4754

[2] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[3] GROESENEKEN G, 1986, THESIS U LEUVEN

[4] CONSISTENT MODEL FOR THE HOT-CARRIER DEGRADATION IN N-CHANNEL AND P-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2194 - 2209

[5] A SIMPLE TECHNIQUE FOR DETERMINING THE INTERFACE-TRAP DISTRIBUTION OF SUB-MICRON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY THE CHARGE PUMPING METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1358 - 1360

[6] POORTER T, 1984, 1984 IEDM, P100

[7] THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2493 - 2500

[8] MOS DEVICE MODELING AT 77-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (08) : 1464 - 1474

[9] SELBERHERR S, 1984, ANAL SIMULATION SEMI, pCH6