A TIME DOMAIN ANALYSIS OF THE CHARGE PUMPING CURRENT

[1] CHARGE PUMPING IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +

[2] A GENERAL-MODEL FOR INTERFACE-TRAP CHARGE-PUMPING EFFECTS IN MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1985, 28 (11) : 1127 - 1141

[3] GOLDER J, 1971, HELV PHYS ACTA, V44, P387

[4] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[5] ANALYTICAL MODELING OF TRANSFER ADMITTANCE IN SMALL MOSFETS AND APPLICATION TO INTERFACE STATE CHARACTERIZATION [J]. SOLID-STATE ELECTRONICS, 1988, 31 (06) : 1077 - 1082

[6] MOS STRUCTURES WITH REVERSE BIASED PN JUNCTION IN APPLYING VOLTAGE OF TRIANGULAR WAVEFORM TO A GATE .1. IMPULSE CURRENT BEHAVIOR [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (01): : 195 - 206

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[8] THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (01) : 53 - 66

[9] A NEW CHARGE PUMPING METHOD OF MEASURING SI-SIO2 INTERFACE STATES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 591 - 599

[10] WACHNIK RA, 1986, IEEE T ELECTRON DEV, V33, P1054, DOI 10.1109/T-ED.1986.22612

[1] CHARGE PUMPING IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +

[2] A GENERAL-MODEL FOR INTERFACE-TRAP CHARGE-PUMPING EFFECTS IN MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1985, 28 (11) : 1127 - 1141

[3] GOLDER J, 1971, HELV PHYS ACTA, V44, P387

[4] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[5] ANALYTICAL MODELING OF TRANSFER ADMITTANCE IN SMALL MOSFETS AND APPLICATION TO INTERFACE STATE CHARACTERIZATION [J]. SOLID-STATE ELECTRONICS, 1988, 31 (06) : 1077 - 1082

[6] MOS STRUCTURES WITH REVERSE BIASED PN JUNCTION IN APPLYING VOLTAGE OF TRIANGULAR WAVEFORM TO A GATE .1. IMPULSE CURRENT BEHAVIOR [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (01): : 195 - 206

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[8] THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (01) : 53 - 66

[9] A NEW CHARGE PUMPING METHOD OF MEASURING SI-SIO2 INTERFACE STATES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 591 - 599

[10] WACHNIK RA, 1986, IEEE T ELECTRON DEV, V33, P1054, DOI 10.1109/T-ED.1986.22612