CONTROL OF AL/GAAS SCHOTTKY-BARRIER HEIGHT BY HIGH CE DOPING

被引：2

作者：

HIROSE, K

FOXMAN, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 23期

关键词：

D O I：

10.1063/1.101122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2347 / 2348

页数：2

共 17 条

[1] SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110) [J].

AMITH, A ;

MARK, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1344-1352

[2] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[3] VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS [J].

GRANT, RW ;

WALDROP, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1015-1019

[4] AL/N-GAAS SCHOTTKY-BARRIER HEIGHT MODIFIED WITH RARE-EARTH-METAL INTERLAYER [J].

HIROSE, K ;

TSUDA, H ;

MIZUTANI, T .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6575-6577

[5] ELECTRON AND HOLE MOBILITY IN MODULATION DOPED GAINAS-AIINAS STRAINED LAYER SUPERLATTICE [J].

HIROSE, K ;

MIZUTANI, T ;

NISHI, K .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :130-135

[6]

HIROSE K, UNPUB

[7]

HIROSE K, IN PRESS APPL SURF S

[8] MECHANISM FOR ANNEALING-INDUCED CHANGES IN THE ELECTRICAL CHARACTERISTICS OF AL/GAAS AND AL/INP SCHOTTKY CONTACTS [J].

NEWMAN, N ;

SPICER, WE ;

WEBER, ER .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1020-1029

[9] OPTICAL CHARACTERIZATION OF INGAAS-INALAS STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

NISHI, K ;

HIROSE, K ;

MIZUTANI, T .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :794-796

[10]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

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