ORDERING EFFECTS ON THE ELECTRICAL CHARACTERISTICS OF GA0.5IN0.5P GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：27

作者：

LEE, MK

HORNG, RH

HAUNG, LC

机构：

[1] Institute of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期

关键词：

D O I：

10.1063/1.105751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between electrical characteristics and structural ordering in undoped and Zn-doped Ga0.5In0.5P films grown by metalorganic chemical vapor deposition is investigated. The Schottky diode was used to examine the electrical properties of the undoped samples with ordered and disordered structures. With the same carrier concentration (approximately 1.5 X 10(16) cm-3), the diode fabricated on the ordered film shows a degraded current-voltage characteristic. As the carrier concentration of Zn-doped Ga0.5In0.5P increases above 1.5 X 10(18) cm-3, the energy gap of the ordered structure is larger than that of the disordered structure. It was found that the hole mobility of the ordered film is lower than that of the disordered film with the similar doping level. The behavior could be attributed to the existence of antiphase boundaries within the ordered structure. The antiphase boundaries can act as recombination centers and/or scattering centers and result in the extraordinary electrical properties of the ordered samples.

引用

收藏

页码：3261 / 3263

页数：3

相关论文

共 15 条

[1] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

BELLON, P ;

CHEVALIER, JP ;

MARTIN, GP ;

DUPONTNIVET, E ;

THIEBAUT, C ;

ANDRE, JP .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :567-569

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[3] GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON [J].

FANG, SF ;

ADOMI, K ;

IYER, S ;

MORKOC, H ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :R31-R58

[4] UNUSUAL PROPERTIES OF PHOTOLUMINESCENCE FROM PARTIALLY ORDERED GA0.5IN0.5P [J].

FOUQUET, JE ;

ROBBINS, VM ;

ROSNER, SJ ;

BLUM, O .

APPLIED PHYSICS LETTERS, 1990, 57 (15) :1566-1568

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[6] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HINO, I ;

GOMYO, A ;

KOBAYASHI, K ;

SUZUKI, T ;

NISHIDA, K .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :987-989

[7] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J].

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

CAMPBELL, JC .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :154-165

[8] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIKAWA, M ;

OHBA, Y ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[9] EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP [J].

NELSON, RJ ;

HOLONYAK, N .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (06) :629-637

[10] GAXIN1-XP-GAYAL1-YAS HETEROJUNCTION CLOSE-CONFINEMENT INJECTION LASER [J].

SCHUL, G ;

MISCHEL, P .

APPLIED PHYSICS LETTERS, 1975, 26 (07) :394-395