STUDY OF THE ELECTRICAL ADMITTANCE DUE TO ELECTRON-HOLE RECOMBINATION IN N-GAAS AND N-GAP ELECTRODES

被引：15

作者：

VANMAEKELBERGH, D

TERHEIDE, RP

KRUIJT, W

机构：

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1989年 / 93卷 / 10期

关键词：

D O I：

10.1002/bbpc.19890931011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1103 / 1109

页数：7

共 18 条

[1] PHOTOCAPACITANCE STUDY OF N-GAAS ELECTROLYTE INTERFACES [J].

ALLONGUE, P ;

CACHET, H .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1987, 91 (04) :386-390

[2] BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE [J].

ALLONGUE, P ;

CACHET, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :45-52

[3] PHOTOEXCITATION AND LUMINESCENCE IN REDOX PROCESSES ON GALLIUM PHOSPHIDE ELECTRODES [J].

BECKMANN, KH ;

MEMMING, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) :368-&

[4] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .2. PHOTOINDUCED NEAR-SURFACE RECOMBINATION CENTERS IN P-GAP [J].

LI, J ;

PEAT, R ;

PETER, LM .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 165 (1-2) :41-59

[5] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .4. STEADY-STATE AND INTENSITY MODULATED PHOTOCURRENTS AT NORMAL-GAAS ELECTRODES [J].

LI, J ;

PETER, LM .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1986, 199 (01) :1-26

[6] INSITU PHOTOLUMINESCENCE STUDIES OF N-TYPE GALLIUM-PHOSPHIDE SEMICONDUCTOR ELECTRODES - INTERMEDIATES AND MECHANISM OF PHOTOANODIC ELECTRON-TRANSFER REACTIONS [J].

NAKATO, Y ;

MORITA, K ;

TSUBOMURA, H .

JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (12) :2718-2723

[7] ANALYSIS OF TRAPPING AND RECOMBINATION EFFECTS IN PHOTOELECTROCHEMICAL PROCESSES AT SEMICONDUCTOR ELECTRODES - INVESTIGATIONS AT N-GAAS [J].

SCHRODER, K ;

MEMMING, R .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1985, 89 (04) :385-392

[8] SPECTRAL DEPENDENCE OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE ON MINORITY-CARRIER CONCENTRATION IN THE N-GAP/ELECTROLYTE SYSTEM [J].

SMANDEK, B ;

GERISCHER, H .

ELECTROCHIMICA ACTA, 1985, 30 (08) :1101-1107

[9] THE MINORITY-CARRIER RECOMBINATION RESISTANCE - A USEFUL CONCEPT IN SEMICONDUCTOR ELECTROCHEMISTRY [J].

VANDENMEERAKKER, JEAM ;

KELLY, JJ ;

NOTTEN, PHL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :638-642

[10] ON THE IMPEDANCE ASSOCIATED WITH ELECTRON-HOLE RECOMBINATION IN THE SPACE-CHARGE LAYER OF AN ILLUMINATED SEMICONDUCTOR ELECTROLYTE INTERFACE [J].

VANMAEKELBERGH, D ;

CARDON, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (02) :124-133

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