PRESSURE-DEPENDENCE OF DEEP ELECTRONIC LEVELS IN SEMICONDUCTORS - PHOSPHORUS-VACANCY PAIR (OR SI-E CENTER) AND DIVACANCY IN SILICON

被引：24

作者：

SAMARA, GA

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.39.12764

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12764 / 12774

页数：11

共 27 条

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