CLUSTER DEPOSITION ON GAAS(110) - FORMATION OF ABRUPT, DEFECT-FREE INTERFACES

被引：54

作者：

WADDILL, GD

VITOMIROV, IM

ALDAO, CM

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.62.1568

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1568 / 1571

页数：4

共 26 条

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