ELECTRON-MOBILITY IN SI-MOSFETS WITH AN ADDITIONAL IMPLANTED CHANNEL

被引：3

作者：

FISCHER, W ^{[1
]}

JACOBS, EP ^{[1
]}

EISELE, I ^{[1
]}

DORDA, G ^{[1
]}

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 03期

关键词：

D O I：

10.1016/0038-1101(79)90024-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A narrow layer of As donors was implanted near the Si-SiO2 interface of n-channel Si MOSFETs/ The drain current flows partially in the implanted channel where the electrons approach bulk mobilities. Gate field dependent measurements of the Hall mobility and the transistor action are reported for 300 and 4.2 K. © 1979.

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页码：225 / 228

页数：4

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