MICROSTRUCTURE OF BEAM-ANNEALED SILICON

被引：3

作者：

GIBSON, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：810 / 817

页数：8

共 33 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[3]

BAGLIN JEE, 1980 IBMM ALB

[4] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[5]

COMPAAN A, 1980, LASER ELECTRON BEAM, P71

[6]

CULLIS AG, 1980, LASER ELECTRON BEAM, P183

[7]

FOTI G, 1980, LASER ELECTRON BEAM, P108

[8] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[9] EVIDENCE FOR PARTIAL SOLID-STATE REGROWTH DURING PULSED-LASER ANNEALING [J].

GIBSON, JM ;

TSU, R .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :197-200

[10]

GIBSON JM, 1979, I PHYS C SER, V52, P149

← 1 2 3 4 →