QUANTUM TUNNELING OF ELECTRONS THROUGH SUPERLATTICES IN METAL-SEMICONDUCTOR OHMIC CONTACTS

被引：2

作者：

HUANG, FY

SHEN, TC

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 10期

关键词：

D O I：

10.1016/0038-1101(93)90045-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ohmic contacts of n+-GaAs using InAs/GaAs strained-layer superlattices are investigated. It is shown that quantum tunneling through superlattice conduction bands plays an essential role in the effective barrier lowering leading to extremely low contact resistance. An estimate based on the transfer matrix calculation of the tunneling coefficient for the specific contact resistance agrees well with reported experimental results. Numerical simulation also indicates that even smaller contact resistances can be obtained by optimizing structural parameters.

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收藏

页码：1375 / 1378

页数：4

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