REVERSIBLE INTERACTION OF HYDROGEN WITH THIN-LAYERS OF THERMALLY GROWN SILICON DIOXIDE

被引：5

作者：

FARE, T ^{[1
]}

SPETZ, A ^{[1
]}

ARMGARTH, M ^{[1
]}

LUNDSTROM, I ^{[1
]}

机构：

[1] LINKOPING UNIV, APPL PHYS LAB, S-58183 LINKOPING, SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5507 / 5513

页数：7

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