CONDUCTION MECHANISMS IN PD/SIO2/N-SI SCHOTTKY DIODE HYDROGEN DETECTORS

被引：25

作者：

PETTY, MC

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 01期

关键词：

D O I：

10.1016/0038-1101(86)90202-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：89 / 97

页数：9

相关论文

共 34 条

[1] ARMGARTH M, 1983, THESIS U LINKOPING S
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[4] PD/ALPHA-SI-H METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER DIODE FOR HYDROGEN DETECTION
DAMICO, A
FORTUNATO, G
PETROCCO, G
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 964 - 965
[5] PD-SI SCHOTTKY DIODES AS HYDROGEN SENSING DEVICES - CAPACITANCE-VOLTAGE CHARACTERISTICS
DILIGENTI, A
STAGI, M
CIUTI, V
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (04) : 347 - 350
[6] A REEVALUATION OF THE MEANING OF CAPACITANCE PLOTS FOR SCHOTTKY-BARRIER-TYPE DIODES
FONASH, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1966 - 1975
[7] THEORY OF TUNNELING INTO INTERFACE STATES
FREEMAN, LB
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1483 - +
[8] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
HEIMAN, FP
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &
[9] HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES
ITO, K
[J]. SURFACE SCIENCE, 1979, 86 (JUL) : 345 - 352
[10] POTENTIALS AND DIRECT-CURRENT IN SI-(20 TO 40 A)SIO2-METAL STRUCTURES
KAR, S
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (08) : 869 - &

← 1 2 3 4 →