ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON-NITRIDE FILMS MEASURED IN STRONG ELECTRIC-FIELDS

被引：8

作者：

CHAUDHARI, PK ^{[1
]}

FRANZ, JM ^{[1
]}

ACKER, CP ^{[1
]}

机构：

[1] IBM CORP, SYSTEM PROD DIV, ESSEX JUNCTION, VT 05452 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 07期

关键词：

D O I：

10.1149/1.2403613

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：991 / 993

页数：3

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共 15 条

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[2] BEAN KE, 1966, OCT EL SOC M PHIL
[3] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[4] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &
[5] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
FLEMING, PJ
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &
[6] DEERY M, 1971, THIN SOLID FILMS, V8, pR16
[7] DOO VY, 1966, OCT EL SOC M PHIL
[8] Frenkel J., 1938, TECH PHYS USSR, V5, P685
[9] ELECTRICAL CONDUCTION THROUGH SIO FILMS
HARTMAN, TE
BLAIR, JC
BAUER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2468 - &
[10] PHOTO-CURRENTS IN SILICON MONOXIDE FILMS
JONSCHER, AK
ANSARI, AA
[J]. PHILOSOPHICAL MAGAZINE, 1971, 23 (181): : 205 - &