POSITRON STUDY OF VACANCY-TYPE DEFECTS INDUCED BY HEAVY DOPING INTO MBE-GROWN GAAS

被引：16

作者：

UEDONO, A ^{[1
]}

TANIGAWA, S ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

D O I：

10.1143/JJAP.29.L346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable-energy positron beam studies have been carried out on heavily Si-doped GaAs/AlGaAs/GaAs specimens prepared by molecular beam epitaxy. From the measurements of Doppler broadening profiles of the positron annihilation as a function of the incident positron energy, it was found that Ga vacancies with very high concentration are introduced in the GaAs layer by the heavy doping of Si. It was concluded that a Ga vacancy acts to reduce the concentration of free carriers. © 1990 IOP Publishing Ltd.

引用

页码：L346 / L348

页数：3

共 18 条

[1] [Anonymous], 1983, POSITRON SOLID STATE
[2] POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS
CORBEL, C
STUCKY, M
HAUTOJARVI, P
SAARINEN, K
MOSER, P
[J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8192 - 8208
[3] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION
DANNEFAER, S
HOGG, B
KERR, D
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3355 - 3366
[4] VACANCY INTERACTIONS IN GAAS
DANNEFAER, S
KERR, D
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 591 - 594
[5] POINT-DEFECTS IN GAAS STUDIED BY CORRELATED POSITRON LIFETIME, OPTICAL, AND ELECTRICAL MEASUREMENTS .1. NATIVE POINT-DEFECTS AND THEIR COMPLEXES IN AS-GROWN GAAS
DLUBEK, G
DLUBEK, A
KRAUSE, R
BRUMMER, O
FRIEDLAND, K
RENTZSCH, R
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02): : 419 - 432
[6] POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS
DLUBEK, G
BRUMMER, O
PLAZAOLA, F
HAUTOJARVI, P
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (03): : 331 - 344
[7] HAUTOJARVI P, 1979, TOPICS CURRENT PHYSI, V12
[8] DEFECT FORMATION IN H-IMPLANTATION OF CRYSTALLINE SI
KEINONEN, J
HAUTALA, M
RAUHALA, E
KARTTUNEN, V
KURONEN, A
RAISANEN, J
LAHTINEN, J
VEHANEN, A
PUNKKA, E
HAUTOJARVI, P
[J]. PHYSICAL REVIEW B, 1988, 37 (14): : 8269 - 8277
[9] DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING
LEE, JL
SHIM, KH
KIM, JS
PARK, HM
MA, DS
TANIGAWA, S
UEDONO, A
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 396 - 397
[10] MILLS AP, 1983, POSITRON SOLID STATE, P431

← 1 2 →