EFFECT OF CONFINING LAYER ALUMINUM COMPOSITION ON ALGAAS-GAAS-INGAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE LASERS

被引：14

作者：

YORK, PK ^{[1
]}

LANGSJOEN, SM ^{[1
]}

MILLER, LM ^{[1
]}

BEERNINK, KJ ^{[1
]}

ALWAN, JJ ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.103408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on laser threshold current density and emission wavelength of strained-layer InGaAs-GaAs-AlxGa1-xAs single quantum well lasers having confining layer aluminum compositions in the range 0.20≤x≤0.85. A decrease in threshold current density with increasing confining layer composition is related to the increased confinement factor of the waveguide structure. An increase in the laser emission wavelength is observed as a consequence of reduced bandfilling.

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收藏

页码：843 / 845

页数：3

相关论文

共 23 条

[1]

ANDERSON NG, 1986, J APPL PHYS, V60, P2363

[2] DEPENDENCE OF THRESHOLD CURRENT-DENSITY ON QUANTUM WELL COMPOSITION FOR STRAINED-LAYER INGAAS-GAAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BEERNINK, KJ ;

YORK, PK ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2585-2587

[3] CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS [J].

BEERNINK, KJ ;

YORK, PK ;

COLEMAN, JJ ;

WATERS, RG ;

KIM, J ;

WAYMAN, CM .

APPLIED PHYSICS LETTERS, 1989, 55 (21) :2167-2169

[4] CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].

BOUR, DP ;

GILBERT, DB ;

ELBAUM, L ;

HARVEY, MG .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2371-2373

[5] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

CASEY, HC ;

PANISH, MB ;

SCHLOSSE.WO ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :322-333

[6] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1236-1245

[7] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETA, D ;

CHAN, KT ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[8] BROAD-BAND LONG-WAVELENGTH OPERATION (9700-A-GREATER-THAN-OR-APPROXIMATELY-TO-LAMBDA-GREATER-THAN-OR-APPROXIMATELY-TO-8700-A) OF ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS IN AN EXTERNAL GRATING CAVITY [J].

HALL, DC ;

MAJOR, JS ;

HOLONYAK, N ;

GAVRILOVIC, P ;

MEEHAN, K ;

STUTIUS, W ;

WILLIAMS, JE .

APPLIED PHYSICS LETTERS, 1989, 55 (08) :752-754

[9] STRAINED-LAYER INGAAS-GAAS-ALGAAS PHOTOPUMPED AND CURRENT INJECTION-LASERS [J].

KOLBAS, RM ;

ANDERSON, NG ;

LAIDIG, WD ;

SIN, YK ;

LO, YC ;

HSIEH, KY ;

YANG, YJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1605-1613

[10]

LACOURSE J, 1990, P TECHNICAL DIGEST O