VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY - APPLICATION TO GAAS-ALGAAS MULTILAYER HOMOGENEITY CHARACTERIZATION

被引：17

作者：

ALTEROVITZ, SA

SNYDER, PG

MERKEL, KG

WOOLLAM, JA

RADULESCU, DC

EASTMAN, LF

机构：

[1] UNIV NEBRASKA,DEPT ELECT ENGN,LINCOLN,NE 68588

[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5081 / 5084

页数：4

共 12 条

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[2] ANALYTIC SOLUTIONS FOR OPTIMIZED ELLIPSOMETRIC MEASUREMENTS OF INTERFACES AND SURFACE-LAYERS IN THIN-FILM STRUCTURES
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[3] OPTICAL-PROPERTIES OF ALXGA1-XAS
ASPNES, DE
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LOGAN, RA
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 754 - 767
[4] AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, pCH4
[5] VARIABLE WAVELENGTH, VARIABLE ANGLE ELLIPSOMETRY INCLUDING A SENSITIVITIES CORRELATION TEST
BUABBUD, GH
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[J]. THIN SOLID FILMS, 1986, 138 (01) : 27 - 41
[6] INTERFACE ANALYSIS BY SPECTROSCOPIC ELLIPSOMETRY OF GA1-XALXAS-GAAS HETEROJUNCTIONS GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY
ERMAN, M
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 285 - 287
[7] ANISOTROPIC TRANSPORT IN MODULATION-DOPED QUANTUM-WELL STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2301 - 2306
[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF GA DESORPTION FROM MOLECULAR-BEAM EPITAXIALLY GROWN ALXGA1-XAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 594 - 597
[9] ELLIPSOMETRIC ANALYSIS OF BUILT-IN ELECTRIC-FIELDS IN SEMICONDUCTOR HETEROSTRUCTURES
SNYDER, PG
OH, JE
WOOLLAM, JA
OWENS, RE
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 770 - 772
[10] VARIABLE ANGLE OF INCIDENCE SPECTROSCOPIC ELLIPSOMETRY - APPLICATION TO GAAS-ALXGA1-XAS MULTIPLE HETEROSTRUCTURES
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ALTEROVITZ, SA
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3293 - 3302

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