SELECTIVE TUNGSTEN FILLING OF SUB-0.25 MU-M TRENCHES FOR THE FABRICATION OF SCALED CONTACTS AND X-RAY MASKS

被引：3

作者：

MALUF, NI

CHOU, SY

PEASE, RFW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：568 / 569

页数：2

共 13 条

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[8] CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN (CVD W) AS SUB-MICRON INTERCONNECTION AND VIA STUD [J].

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