TRANSPORT MECHANISM OF X-BAND ELECTRONS IN ALAS ELECTRODE THROUGH GAAS/ALAS/GAAS STRUCTURE BY VARYING GAAS WELL THICKNESS

被引：7

作者：

SHIEH, TH

LEE, SC

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期

关键词：

D O I：

10.1063/1.110141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport of X band electrons through AlAs/GaAs/AlAs/GaAs/AlAs structure with various GaAs well thickness is investigated. The resonant tunneling of X band electrons through X band double barrier is only observed when the GaAs well thickness becomes smaller than 3 nm. For thicker GaAs, the single tunneling peak is due to X band electrons tunneling through the GAMMA band confined states in the GaAs well. Its longitudinal optical phonon replica is also observed at temperature below 80 K, but disappears at higher temperature. This replica is due to the scattering of electrons from X band of AlAs electrode to the GAMMA band of GaAs in order to satisfy the momentum conservation.

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页码：3350 / 3352

页数：3

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