FORMATION AND GROWTH OF ELECTROMIGRATION INDUCED ISLANDS IN ALUMINUM AND IN ALUMINUM-ALLOY FILMS

被引:10
作者
CHANG, CY
VOOK, RW
机构
[1] Laboratory for Solid State Science and Technology, Physics Department, Syracuse University, Syracuse
关键词
D O I
10.1016/0040-6090(93)90723-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Islands, similar to those formed during thin film growth, were observed in aluminum, Al-1.7wt.%Cu, Al-7.6wt.%Cu and Al-1.7wt.%Cu-<1wt.%Si films by in situ transmission electron microscopy (TEM) in the later stages of electromigration (EM) testing. These islands formed in the EM-induced thinned and void regions. They were located on the inner surfaces of the thin aluminum oxide films which originally bounded the aluminum layer. These islands often showed crystallographic shapes. TEM micrographs showed clearly that one of the island growth mechanisms was by the coalescence of small islands. Also the evidence suggested that there was additional material that entered the island regions, which then contributed to island growth. The island density was found to increase as the copper concentration in the alloy films increased. A model is proposed to explain the formation of these EM-induced islands.
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页码:23 / 30
页数:8
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