EFFECTS OF RF-POWER AND REACTANT GAS-PRESSURE ON PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON

被引：27

作者：

POTTS, JE ^{[1
]}

PETERSON, EM ^{[1
]}

MCMILLAN, JA ^{[1
]}

机构：

[1] ARGONNE NATL LAB,DIV SOLID STATE SCI,ARGONNE,IL 60439

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.328616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6665 / 6672

页数：8

共 31 条

[1] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].

BIEGELSEN, DK ;

STREET, RA ;

TSAI, CC ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846

[2] DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE [J].

BRODSKY, MH .

THIN SOLID FILMS, 1977, 40 (JAN) :L23-L25

[3] PLASMA PREPARATIONS OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH .

THIN SOLID FILMS, 1978, 50 (MAY) :57-67

[4]

BRODSKY MH, TOP APPL PHYS, V36

[5]

CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P203

[6] OPTICAL CHARACTERIZATION OF AMORPHOUS-SILICON HYDRIDE FILMS [J].

CODY, GD ;

WRONSKI, CR ;

ABELES, B ;

STEPHENS, RB ;

BROOKS, B .

SOLAR CELLS, 1980, 2 (03) :227-243

[7] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1978, 18 (08) :4288-4300

[8] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[9] HYDROGEN CONTENT AND DENSITY OF PLASMA-DEPOSITED AMORPHOUS SILICON-HYDROGEN [J].

FRITZSCHE, H ;

TANIELIAN, M ;

TSAI, CC ;

GACZI, PJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3366-3369

[10]

FRITZSCHE H, 1977, AMORPHOUS LIQUID SEM

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