FAILURE MECHANISMS AND RELIABILITY OF LOW-NOISE GAAS FETS

被引：17

作者：

IRVIN, JC

LOYA, A

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1978年 / 57卷 / 08期

关键词：

D O I：

10.1002/j.1538-7305.1978.tb02178.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2823 / 2846

页数：24

共 18 条

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HEWITT BS, 1976, 1977 GAAS RELATED CO, P246

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[8] NONOHMIC CONTACTS FOR MICROWAVE DEVICES [J].

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[9] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J].

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[10] LOW-NOISE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR-AMPLIFIER FOR 4-GHZ RADIO [J].

KNERR, RH ;

SWAN, CB .

BELL SYSTEM TECHNICAL JOURNAL, 1978, 57 (03) :479-490

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