PERSISTENT DECREASE OF DARK CONDUCTIVITY DUE TO ILLUMINATION IN ALGAAS/GAAS MODULATION-DOPED HETEROSTRUCTURES

被引：2

作者：

PETTERSSON, H ^{[1
]}

GRIMMEISS, HG ^{[1
]}

POWELL, AL ^{[1
]}

BUTTON, CC ^{[1
]}

ROBERTS, JS ^{[1
]}

ROCKETT, PI ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.355285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a persistent decrease of the dark conductivity in AlGaAs/GaAs heterostructures due to illumination. The decrease was observed for photon energies between 0.7 and 1.15 eV and larger than 1.4 eV in the temperature range 170 < T < 300 K. Using proper bias conditions the dark conductivity after illumination can be 20% smaller than the dark conductivity in thermal equilibrium. The studies have been performed on samples with different doping species and compositions. A possible model for the observed behavior is discussed.

引用

页码：5596 / 5601

页数：6

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