NEGATIVE PHOTOCONDUCTIVITY IN HIGH ELECTRON-MOBILITY TRANSISTORS

被引：16

作者：

CHANG, CS ^{[1
]}

FETTERMAN, HR ^{[1
]}

NI, D ^{[1
]}

SOVERO, E ^{[1
]}

MATHUR, B ^{[1
]}

HO, WJ ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2233 / 2235

页数：3

共 12 条

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[4] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS)
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[5] FISHER R, 1984, IEEE T ELECTRON DEV, V31, P1028
[6] ON THE LOW-TEMPERATURE DEGRADATION OF (ALGA)AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) : 414 - 423
[7] INFLUENCE OF ALLOY COMPOSITION, SUBSTRATE-TEMPERATURE, AND DOPING CONCENTRATION ON ELECTRICAL-PROPERTIES OF SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
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[8] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
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[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[10] ROOM-TEMPERATURE ELECTRON TRAPPING IN AL0.35GA0.65AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 628 - 630

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