CHEMICAL BEAM EPITAXY OF CDTE, HGTE, AND HGCDTE

被引：7

作者：

BENZ, RG

WAGNER, BK

RAJAVEL, D

SUMMERS, CJ

机构：

[1] Physical Sciences Laboratory, Georgia Tech Research Institute, Atlanta

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91070-Q

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A chemical beam epitaxy (CBE) system has been implemented for the growth of CdTe, HgTe, and their alloys. The system is briefly described. Results on the cracking of the organometallic source gases are presented. Epitaxial layers have been grown from gas sources of diethylcadmium, diisopropyltelluride and Hg vapor, as well as conventional solid sources. Optical and electrical properties are reported, demonstrating the potential of CBE for growing high quality solar cell and infrared detector material.

引用

页码：725 / 729

页数：5

共 8 条

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