SUB-MICRON ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH HIGH-GAIN

被引：3

作者：

ANZLOWAR, M

HUMPHREY, DA

SIVCO, D

CHO, AY

NOTTENBURG, RN

LEVI, AFJ

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 22期

关键词：

D O I：

10.1049/el:19891028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1529 / 1530

页数：2

共 7 条

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[5] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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ITO, H ;

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[6] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

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[7] HETEROSTRUCTURE DEVICES USING SELF-ALIGNED P-TYPE DIFFUSED OHMIC CONTACTS [J].

TIWARI, S ;

GINZBERG, A ;

AKHTAR, S ;

WRIGHT, SL ;

MARKS, RF ;

KWARK, YH ;

KIEHL, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :422-424

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