ANNEALING BEHAVIOR OF A LIGHT-SCATTERING TOMOGRAPHY DETECTING DEFECT NEAR-THE-SURFACE OF SI WAFERS

被引：4

作者：

FURUKAWA, J

FURUYA, H

机构：

[1] Central Research Institute, Mitsubishi Materials Corporation, Omiya, Saitama, 330

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 2A期

关键词：

CZOCHRALSKI SILICON; INFRARED LIGHT SCATTERING TOMOGRAPHY; OBLIQUELY INCIDENT; NEAR THE SURFACE; GROWN-IN DEFECTS; LIGHT SCATTERING TOMOGRAPHY DETECTING DEFECT;

D O I：

10.1143/JJAP.34.L156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the annealing behavior of a Light Scattering Tomography detecting Defect (LSTD) which exists in 0 to about 20 mu m beneath the surface of Si wafers. LSTDs were detected at the beam positions by the obliquely incident method of the infrared light scattering tomography (IR-LST) before and after annealing at temperatures from 1000 degrees C to 1280 degrees C in dry O-2 or N-2. LSTDs still existed after annealing at temperatures below 1250 degrees C and disappeared after annealing at 1280 degrees C. The annealing behavior of LSTDs did not depend on the ambient, dry O-2 or N-2, during annealing and locations of LSTDs.

引用

页码：L156 / L158

页数：3

共 8 条

[1] DETECTION OF BULK MICRODEFECTS UNDERNEATH THE SURFACE OF SI WAFER USING INFRARED LIGHT-SCATTERING TOMOGRAPHY [J].

FURUKAWA, J ;

FURUYA, H ;

SHINGYOUJI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A) :5178-5179

[2]

FURUYA H, 1993, I PHYS C SER, V135, P11

[3]

KASHIWAGI A, 38TH SPRING M JAP SO

[4] INFRARED LIGHT-SCATTERING TOMOGRAPHY WITH AN ELECTRICAL STREAK CAMERA FOR CHARACTERIZATION OF SEMICONDUCTOR CRYSTALS [J].

OGAWA, T ;

NANGO, N .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (06) :1135-1139

[5] CRYSTAL-ORIGINATED SINGULARITIES ON SI WAFER SURFACE AFTER SC1 CLEANING [J].

RYUTA, J ;

MORITA, E ;

TANAKA, T ;

SHIMANUKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11) :L1947-L1949

[6] DEPENDENCE OF THE GROWN-IN DEFECT DISTRIBUTION ON GROWTH-RATES IN CZOCHRALSKI SILICON [J].

SADAMITSU, S ;

UMENO, S ;

KOIKE, Y ;

HOURAI, M ;

SUMITA, S ;

SHIGEMATSU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3675-3681

[7]

SHIOTA T, 1993, MAY P SPRING M EL SO

[8] RECOGNITION OF D-DEFECTS IN SILICON SINGLE-CRYSTALS BY PREFERENTIAL ETCHING AND EFFECT ON GATE OXIDE INTEGRITY [J].

YAMAGISHI, H ;

FUSEGAWA, I ;

FUJIMAKI, N ;

KATAYAMA, M .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) :A135-A140

← 1 →