ELECTRICAL AND ELECTRON MICROSCOPE OBSERVATIONS ON ANTIMONY-IMPLANTED SILICON

Sheet resistivity and Hall effect measurements have been combined with controlled anodic oxidation and hydrofluoric acid stripping to determine donor distributions with depth and mobilities in antimony implanted silicon (50 and 100 keV, 1013 to 3×1015 ions/cm2). The mobilities were found to be similar to those in diffused junctions, but the peak of the donor profile was significantly deeper than expected theoretically. Electron microscopy has been used to investigate unusual effects occurring at the highest doses where the solid solubility (1020 atoms/cm3) was exceeded, giving rise to antimony precipitation together with poor surface recrystallisation on annealing. © 1969 Chapman and Hall Ltd.