OXYGEN-ADSORPTION AND SURFACE ELECTRONIC-STRUCTURE OF GAAS (110)

被引：6

作者：

LINDAU, I

PIANETTA, P

SPICER, WE

GREGORY, PE

GARNER, CM

CHYE, PW

机构：

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1978年 / 13卷 / 03期

关键词：

D O I：

10.1016/0368-2048(78)85023-3

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

收藏

页码：155 / 160

页数：6

相关论文

共 19 条

[1] ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS
CALANDRA, C
MANGHI, F
BERTONI, CM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11): : 1911 - 1927
[2] RELAXATION EFFECTS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (10) : 4724 - 4726
[3] SURFACE-STATE EXCITONS IN SEMICONDUCTORS
DELSOLE, R
TOSATTI, E
[J]. SOLID STATE COMMUNICATIONS, 1977, 22 (05) : 307 - 310
[4] SYNCHROTRON RADIATION AS A NEW TOOL WITHIN PHOTON-BEAM TECHNOLOGY
DONIACH, S
LINDAU, I
SPICER, WE
WINICK, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1123 - 1127
[5] ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES
DORN, R
LUTH, H
RUSSELL, GJ
[J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5049 - 5056
[6] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627
[7] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS
GUDAT, W
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837
[8] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &
[9] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS
KNAPP, JA
LAPEYRE, GJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 757 - 760
[10] EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110)
LAPEYRE, GJ
ANDERSON, J
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (02) : 117 - 120