RAPID DETERMINATION OF SEMICONDUCTOR DOPING PROFILES IN MOS STRUCTURES

被引:29
作者
ZOHTA, Y [1 ]
机构
[1] TOSHIBA RES & DEV CTR,KOMUKAI,KAWASAKI,JAPAN
关键词
D O I
10.1016/0038-1101(73)90134-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:124 / 126
页数:3
相关论文
共 8 条
[1]  
COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445
[2]   OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].
DEAL, BE ;
GROVE, AS ;
SNOW, EH ;
SAH, CT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&
[3]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
NICOLLIA.EH ;
GOETZBER.A .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+
[4]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[5]   SILICON IMPURITY DISTRIBUTION AS REVEALED BY PULSED MOS C-V MEASUREMENTS [J].
VANGELDER, W ;
NICOLLIAN, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :138-+
[8]  
ZOHTA Y, UNPUBLISHED WORK