DOMINANT DEEP-LEVEL IN ANNEALED LOW-TEMPERATURE GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引:15
作者
LIN, TC
KAIBE, HT
OKUMURA, T
机构
[1] Department of Electronics and Information Engineering, Tokyo Metropolitan University, Hachiohji, Tokyo, 192-03
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 12A期
关键词
GAAS; LOW-TEMPERATURE MBE GROWTH; SEMIINSULATING; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); ELECTRON TRAP; EL3; LEVEL;
D O I
10.1143/JJAP.33.L1651
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deep levels in the annealed low temperature molecular beam epitaxial(LT-MBE) GaAs layer were characterized by using the capacitance-deep-level transient spectroscopy (DLTS) technique in combination with a unique sample structure. We have fabricated the samples by inserting the LT-GaAs layer between two n-type semiconductive layers grown at normal substrate temperatures, like a sandwich. DLTS measurements revealed that one electron trap dominates the annealed LT-MBE GaAs layer. This dominant electron trap was very similar to the so-called EL3 level. By changing growth parameters of LT-Gabs layers, we found that the trap concentration of this EL3-like level was strongly related to Si doping and excess arsenic.
引用
收藏
页码:L1651 / L1654
页数:4
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