APPLICATIONS OF NEGATIVE-ION BEAMS

被引:29
作者
ISHIKAWA, J
机构
[1] Department of Electronics, Kyoto University, Sakyo-ku, Kyoto, 606-01, Yoshida-honmachi
关键词
D O I
10.1016/S0257-8972(94)80010-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The use of high current beams of negative ions for ion implantation and ion- beam deposition is described. A versatile r.f. sputter source which can deliver several milliamperes of negative ions such as boron, carbon, silicon and copper has been developed. It was observed that the surface charge-up of insulated targets implanted with negative ions saturated at only a few volts without breakdown. Pure carbon films of tetrahedrally bonded amorphous structure with high thermal conductivity comparable with that of diamond were prepared by the deposition of mass-separated carbon negative ions with precise control of the kinetic energy and the deposited species.
引用
收藏
页码:64 / 70
页数:7
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