BIAS-INDUCED STRUCTURE TRANSITION IN REACTIVELY SPUTTERED TIN FILMS

被引：20

作者：

HASHIMOTO, K

ONODA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.101227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：120 / 122

页数：3

共 11 条

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[2]

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[4] INVESTIGATION OF REACTIVELY SPUTTERED TIN FILMS FOR DIFFUSION-BARRIERS [J].

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[5]

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[6]

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[7] GROWTH AND PROPERTIES OF TIN AND TIOXNY DIFFUSION-BARRIERS IN SILICON ON SAPPHIRE INTEGRATED-CIRCUITS [J].

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LEE, B ;

DOUGLAS, EC .

THIN SOLID FILMS, 1987, 153 :287-301

[8]

MAEDA T, 1985, TECH DIGEST INT ELEC, P610

[9] INFLUENCE OF SUBSTRATE BIAS ON THE COMPOSITION, STRUCTURE AND ELECTRICAL-PROPERTIES OF REACTIVELY DC-SPUTTERED TIN FILMS [J].

POITEVIN, JM ;

LEMPERIERE, G ;

TARDY, J .

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[10] OXYGEN IN TITANIUM NITRIDE DIFFUSION-BARRIERS [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (05) :471-473

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