REACTIVE ION ETCHING OF TUNGSTEN IN SF6-N2 PLASMA

被引：17

作者：

MUTSUKURA, N

TURBAN, G

机构：

[1] Department of Electronic Engineering, Tokyo Denki University 2-2 Nishikicho Kanda, Chiyoda-ku

[2] Laboratoire des Plasmas et des Couches Minces, Universite de Nantes, 44072 Nantes, Cedex 03

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 01期

关键词：

D O I：

10.1149/1.2086371

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The reactive ion etching of tungsten has been studied in a parallel plate electrode configuration with various cathode materials in an SF6-N2 gas mixture. The use of an Si02 cathode enhances the etching rate of W when 10-20% of nitrogen is added to the SF6 plasma. This result is explained by the change in gas-phase chemistry due to oxygen and nitrogen reactions and by the increase of the ion energy. As a result, a cleaning of the W surface by removal of sulfur and desorption of WF6 species has been observed by means of XPS analysis of the etched tungsten surface. Mass spectrometric measurements indicate that the loading effect also contributes to increase the W etching rate. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：225 / 229

页数：5

共 23 条

[1] REACTIVE ION ETCHING OF TUNGSTEN FILMS SPUTTER DEPOSITED ON GAAS [J].