CHARACTER OF SURFACE-STATES AT GAAS-SURFACES

被引:14
作者
KREUTZ, EW
机构
[1] Institut Für Angewandte Physik, Technischen Hochschule Darmstadt
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 02期
关键词
D O I
10.1002/pssa.2210560236
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The analysis of field effect measurements and of thermally stimulated currents allows to derive the general shape of the distribution of surface states for GaAs surfaces. The density of fast surface states consists out of a continuous distribution with a minimum near the middle of the energy gap as well as increasing tails towards the band edges. About the middle of the forbidden gap a peaking distribution is superposed to the continuous distribution. The response to physical and chemical influence allows to discriminate between intrinsic and extrinsic surface states. This distribution of surface states qualitatively yields a satisfactory description of the experimental results. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:687 / 696
页数:10
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