DEFECT CHEMICAL-POTENTIAL AND THE DENSITY OF STATES IN AMORPHOUS-SILICON

被引:25
作者
DEANE, SC
POWELL, MJ
机构
[1] Philips Research Laboratories, Redhill, Surrey
关键词
D O I
10.1103/PhysRevLett.70.1654
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We derive a general expression for the defect chemical potential of amphoteric silicon dangling bond states in amorphous silicon. We show that a single expression is valid, irrespective of the charge state of the dangling bond. We apply this result in a defect pool model for the formation of dangling bonds by the breaking of weak silicon-silicon bonds, with and without hydrogen motion. We calculate the resulting energy dependent density of states.
引用
收藏
页码:1654 / 1657
页数:4
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