Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

被引：11

作者：

Jiang, WH ^{[1
]}

Xu, HZ ^{[1
]}

Xu, B ^{[1
]}

Wu, J ^{[1
]}

Ye, XL ^{[1
]}

Liu, HY ^{[1
]}

Zhou, W ^{[1
]}

Sun, ZZ ^{[1
]}

Li, YF ^{[1
]}

Liang, JB ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 205卷 / 04期

基金：

中国国家自然科学基金;

关键词：

quantum dots; InGaAs/InGaAlAs; adjusting layer; molecular beam epitaxy; high index;

D O I：

10.1016/S0022-0248(99)00304-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, InGaAs quantum dots with an adjusting InGaAlAs layer underneath are grown on (n 1 1)A/B (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. Small and dense InGaAs quantum dots are formed on (1 0 0) and (n 1 1)B substrates. A comparative study by atomic force microscopy shows that the alignment and uniformity for InGaAs quantum dots are greatly improved on(5 1 1)B but deteriorated on (3 1 1)B surface, demonstrating the great influence of the buried InGaAlAs layer. There is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. Quantum dots formed on (3 1 1)A and (5 1 1)A surfaces are large and random in distribution, and no emission from these dots can be detected. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：607 / 612

页数：6

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