THEORETICAL ANALYSES OF AMORPHOUS-SEMICONDUCTOR MULTIJUNCTIONS

被引：5

作者：

CHEN, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.337566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3605 / 3610

页数：6

共 13 条

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CHEN, I ;

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[3] SPACE-CHARGE DOPING EFFECTS IN AMORPHOUS-SEMICONDUCTOR MULTILAYERS [J].

CHEN, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1093-1096

[4] EXCESS CARRIER DENSITIES IN AMORPHOUS-SILICON DOPING-MODULATED MULTILAYERS [J].

CHEN, I .

PHYSICAL REVIEW B, 1986, 33 (12) :8433-8435

[5] THEORETICAL ANALYSES OF SPACE-CHARGE DOPING IN AMORPHOUS-SEMICONDUCTOR SUPERLATTICES .1. DOPING SUPERLATTICES [J].

CHEN, I .

PHYSICAL REVIEW B, 1985, 32 (02) :879-884

[6] INTERFERENCE OF ELECTRIC-DIPOLE AND MAGNETIC-DIPOLE INTERACTIONS IN CONDUCTION-ELECTRON-SPIN RESONANCE IN INSB [J].

CHEN, YF ;

DOBROWOLSKA, M ;

FURDYNA, JK ;

RODRIGUEZ, S .

PHYSICAL REVIEW B, 1985, 32 (02) :890-902

[7] TEMPERATURE AND EXCITATION DEPENDENCE OF THE PHOTOINDUCED EXCESS CONDUCTIVITY IN DOPING MODULATED AMORPHOUS-SILICON [J].

KAKALIOS, J ;

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JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1101-1104

[8] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].

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[9]

STEEMERS H, 1986 P MAT RES SOC S

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH2

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