ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY

被引：84

作者：

HAGSTRUM, HD ^{[1
]}

BECKER, GE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.8.1580

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1580 / 1591

页数：12

相关论文

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