THE SITE DISTRIBUTION OF AMPHOTERIC DOPANTS IN MULTIPLY-DOPED GAAS

被引:14
作者
HURLE, DTJ
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关键词
D O I
10.1016/0022-0248(80)90007-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:638 / 643
页数:6
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