SURFACE-POTENTIAL AT THRESHOLD IN THIN-FILM SOI MOSFETS

被引：22

作者：

MAZHARI, B ^{[1
]}

IOANNOU, DE ^{[1
]}

机构：

[1] GEORGE MASON UNIV,DEPT ELECT & COMP ENGN,FAIRFAX,VA 22030

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/16.214739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The usual condition for threshold in bulk MOSFET's, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFET's. Using this modified condition the value of the surface potential at threshold in fully depleted transistors is obtained analytically in terms of device dimensions, film doping level, and applied voltages. The results are in excellent agreement with one-dimensional numerical simulations, and it is shown that the surface potential at threshold may differ significantly from 2phi(F), the value conventionally assumed.

引用

页码：1129 / 1133

页数：5

共 19 条

[1] CALCULATION OF THRESHOLD VOLTAGE IN NONUNIFORMLY DOPED MOSFETS [J].

ANTONIADIS, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :303-307

[2] THE EFFECT OF CHANNEL IMPLANTS ON MOS-TRANSISTOR CHARACTERIZATION [J].

BOOTH, RV ;

WHITE, MH ;

WONG, HS ;

KRUTSICK, TJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2501-2509

[3] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].

BROWN, WL .

PHYSICAL REVIEW, 1953, 91 (03) :518-527

[4]

COLINGE JP, 1991, SILICON INSULATOR TE

[5]

COLINGE JP, 1989, IEDM TECH DIG, P819

[6] ONSET OF HEAVY INVERSION IN MOS DEVICES DOPED NONUNIFORMLY NEAR-SURFACE [J].

FELTL, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :288-289

[7] CHARACTERIZATION OF CARRIER GENERATION IN ENHANCEMENT-MODE SOI MOSFETS [J].

IOANNOU, DE ;

CRISTOLOVEANU, S ;

MUKHERJEE, M ;

MAZHARI, B .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) :409-411

[8] INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFETS BY THE DYNAMIC TRANSCONDUCTANCE TECHNIQUE [J].

IOANNOU, DE ;

ZHONG, XD ;

MAZHARI, B ;

CAMPISI, GJ ;

HUGHES, HL .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :430-432

[9] SUBMICROMETER NEAR-INTRINSIC THIN-FILM SOI COMPLEMENTARY MOSFETS [J].

LEE, CT ;

YOUNG, KK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) :2537-2547

[10]

LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

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