STUDIES OF LATTICE DISTORTION AND CRYSTAL CURVATURE IN ARSENIC-IMPLANTED SILICON

被引：6

作者：

KUO, CL

KAO, YH

ARNOLD, E

BILELLO, JC

机构：

[1] SUNY STONY BROOK,DEPT PHYS,STONY BROOK,NY 11794

[2] N AMER PHILIPS CORP,PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

[3] SUNY STONY BROOK,DEPT MAT SCI & ENGN,STONY BROOK,NY 11794

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1791 / 1794

页数：4

共 24 条

[1]

BOHG A, 1982, PHYS CRYST RES TEC A, V46, P445

[2] X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION [J].

BONSE, U ;

HART, M ;

SCHWUTTKE, GH .

PHYSICA STATUS SOLIDI, 1969, 33 (01) :361-+

[3] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[4]

CANOVA E, 1986, B AM PHYS SOC, V31, P652

[5]

CARGILL GS, COMMUNICATION

[6] CHARACTERIZATION OF LATTICE DAMAGE IN ION-IMPLANTED SILICON - MONTE-CARLO SIMULATION COMBINED WITH DOUBLE CRYSTAL X-RAY-DIFFRACTION [J].

CEMBALI, F ;

MAZZONE, AM ;

SERVIDORI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (02) :K125-K127

[7] DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON [J].

CEMBALI, F ;

SERVIDORI, M ;

ZANI, A .

SOLID-STATE ELECTRONICS, 1985, 28 (09) :933-&

[8] X-RAY MEASUREMENT OF ELASTIC STRAIN AND ANNEALING IN SEMICONDUCTORS [J].

COHEN, BG ;

FOCHT, MW .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :105-&

[9] LATTICE-DISTORTIONS FOR ARSENIC IN SINGLE-CRYSTAL SILICON [J].

ERBIL, A ;

WEBER, W ;

CARGILL, GS ;

BOEHME, RF .

PHYSICAL REVIEW B, 1986, 34 (02) :1392-1394

[10]

Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

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