THE HIGH RESIDUAL RESISTIVITY OF COSI2 - EVIDENCE FOR A HOMOGENEITY RANGE

被引：8

作者：

BRIGGS, A ^{[1
]}

THOMAS, O ^{[1
]}

MADAR, R ^{[1
]}

SENATEUR, JP ^{[1
]}

机构：

[1] ECOLE NATL SUPER PHYS GRENOBLE,MAT & GENIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90523-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：88 / 93

页数：6

相关论文

共 16 条

[11] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES
ROSENCHER, E
DELAGE, S
CAMPIDELLI, Y
DAVITAYA, FA
[J]. ELECTRONICS LETTERS, 1984, 20 (19) : 762 - 764
[12] DEFECTS IN A-15 SUPERCONDUCTORS
TESTARDI, LR
[J]. CRYOGENICS, 1977, 17 (02) : 67 - 71
[13] MOLYBDENUM DISILICIDE - CRYSTAL-GROWTH, THERMAL-EXPANSION AND RESISTIVITY
THOMAS, O
SENATEUR, JP
MADAR, R
LABORDE, O
ROSENCHER, E
[J]. SOLID STATE COMMUNICATIONS, 1985, 55 (07) : 629 - 632
[14] THE DIFFUSION OF ELEMENTS IMPLANTED IN FILMS OF COBALT DISILICIDE
THOMAS, O
GAS, P
CHARAI, A
LEGOUES, FK
MICHEL, A
SCILLA, G
DHEURLE, FM
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 2973 - 2980
[15] GROWTH OF STRAINED-LAYER SEMICONDUCTOR-METAL-SEMICONDUCTOR HETEROSTRUCTURES
TUNG, RT
GIBSON, JM
LEVI, AFJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1264 - 1266
[16] WHITE AE, 1987, APPL PHYS LETT, V50, P85