GROWTH OF STRAINED-LAYER SEMICONDUCTOR-METAL-SEMICONDUCTOR HETEROSTRUCTURES

被引：31

作者：

TUNG, RT

GIBSON, JM

LEVI, AFJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.96998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1264 / 1266

页数：3

共 10 条

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[2]

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[8] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J].

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[9] CONTROL OF A NATURAL PERMEABLE COSI2 BASE TRANSISTOR [J].

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[10] SINGLE-CRYSTAL SILICIDE SILICON INTERFACES - STRUCTURES AND BARRIER HEIGHTS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :987-991

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