HYDROGENATED AMORPHOUS-SILICON CRYSTALLINE-SILICON HETEROJUNCTIONS - PROPERTIES AND APPLICATIONS

被引：35

作者：

MATSUURA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2908 / 2914

页数：7

共 19 条

[11]

RAHMAN MM, 1984, INT PVSEC 1 KOBE, P171

[12] ELECTRICAL TRANSPORT IN NGE-PGAAS HETEROJUNCTIONS [J].

RIBEN, AR ;

FEUCHT, DL .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) :583-&

[13] GAP-STATES MEASUREMENT OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON - HIGH-FREQUENCY CAPACITANCE-VOLTAGE METHOD [J].

SASAKI, G ;

FUJITA, S ;

SASAKI, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1013-1017

[14]

Sasaki K., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P294

[15]

SASAKI K, 1987, IEDM, P186

[16]

SMID V, 1985, TETRAHEDRALLY BONDED, P483

[17] AMORPHOUS AND MICROCRYSTALLINE SILICON BIPOLAR HETEROJUNCTION TRANSISTORS [J].

SYMONS, J ;

BAERT, K ;

NIJS, J ;

MERTENS, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1315-1318

[18] THE EFFECT OF THE GAP DOS IN A-SI ON THE PROPERTIES ON THE A-SI/C-SI HETEROJUNCTION [J].

XU, ZY ;

CHEN, W ;

ZHAO, BF ;

WANG, CA ;

ZHANG, FQ ;

WANG, JY .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :983-986

[19]

YABE M, 1984, 4TH P SENS S, P105

← 1 2 →