C-84 THIN-FILMS GROWN EPITAXIALLY ON MICA

被引：36

作者：

SAITO, Y ^{[1
]}

YOSHIKAWA, T ^{[1
]}

FUJIMOTO, N ^{[1
]}

SHINOHARA, H ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT CHEM,NAGOYA 46401,JAPAN

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.9182

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crystalline C84 thin films grown epitaxially on a cleaved surface of mica have been investigated by electron microscopy. The C84 molecules formed a face-centered-cubic lattice (lattice parameter a = 1.59+/-0.02 nm), with the orientation relationship, (111)[110BAR]C84 parallel-to (001)[100]mica. Among the fcc C60, C70, and C84 crystals, a nearly linear relation between the lattice parameters and the fullerene diameters is found.

引用

页码：9182 / 9185

页数：4

共 23 条

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