HIGH-PURITY AND CHROME-DOPED GAAS BUFFER LAYERS GROWN BY LIQUID-PHASE EPITAXY FOR MESFET APPLICATION

被引：10

作者：

ABROKWAH, JK

HITCHELL, ML

BORELL, JE

SCHULZE, DR

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 04期

关键词：

D O I：

10.1007/BF02660130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：723 / 746

页数：24

共 29 条

[21] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY SLIDING BOAT METHOD [J].

NANISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (07) :1177-1184

[22]

NATHANSON HC, 1980, MSN JUN, P37

[23] THERMAL-CONVERSION MECHANISM IN SEMI-INSULATING GAAS [J].

OHNO, H ;

USHIROKAWA, A ;

KATODA, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8226-8228

[24] INFLUENCE OF OXYGEN ON PROPERTIES OF GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

OTSUBO, M ;

SEGAWA, K ;

MIKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (06) :797-803

[25]

STILLMAN GE, 1980, COMMUNICATION

[26]

VERMAAK JS, 1979, SURFACE CONTAMINATIO, V2, P595

[27] SILICON AS A RESIDUAL DONOR IN HIGH-PURITY GAAS [J].

WOLFE, CM ;

KORN, DM ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :78-80

[28]

WOODARD DW, 1979, THESIS CORNELL U ITH

[29]

WOODARD DW, 1980, INT S GAAS RELATED C

← 1 2 3 →