THE EFFECTS OF BOND STRAIN ON THE PROPERTIES OF PLASMA-DEPOSITED SILICON-OXIDE FILMS

被引：3

作者：

MACHONKIN, MA

JANSEN, F

机构：

[1] Xerox, Webster, NY, USA, Xerox, Webster, NY, USA

来源：

THIN SOLID FILMS | 1987年 / 150卷 / 2-3期

关键词：

D O I：

10.1016/0040-6090(87)90110-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L97 / L99

页数：3

共 9 条

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ADAMS, AC ;

ALEXANDER, FB ;

CAPIO, CD ;

SMITH, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1545-1551

[2] EFFECTS OF HUMIDITY ON STRESS IN THIN SILICON DIOXIDE FILMS [J].

BLECH, I ;

COHEN, U .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4202-4207

[3]

JANSEN F, IN PRESS J APPL PHYS

[4]

JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481

[5]

KERN W, 1976, RCA REV, V37, P55

[6] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[7] SLOW FRACTURE MODEL BASED ON STRAINED SILICATE STRUCTURES [J].

MICHALSKE, TA ;

BUNKER, BC .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2686-2693

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1013-&

[9]

PLISKIN WA, 1967, PHYS THIN FILMS, V4, P257

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