EVALUATION OF THE PROXIMITY EFFECT AND GHOST CORRECTION TECHNIQUE FOR SUB-MICRON ELECTRON-BEAM LITHOGRAPHY AT 50 AND 20 KV

被引：11

作者：

KOSTELAK, RL

KUNG, EH

THOMSON, MGR

VAIDYA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2042 / 2047

页数：6

共 12 条

[1]

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[2]

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[3] GHOST PROXIMITY CORRECTION TECHNIQUE - ITS PARAMETERS, LIMITATIONS, AND PROCESS LATITUDE [J].

KOSTELAK, RL ;

KUNG, EH ;

THOMSON, MGR ;

VAIDYA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :448-455

[4]

KUNG EH, 1987, SPIE, V773, P171

[5] VOLTAGE DEPENDENCE OF PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY [J].

KYSER, DF ;

TING, CH .

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[6] PROXIMITY EFFECT CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSE [J].

OWEN, G ;

RISSMAN, P .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3573-3581

[7] SELF-CONSISTENT PROXIMITY EFFECT CORRECTION TECHNIQUE FOR RESIST EXPOSURE (SPECTER) [J].

PARIKH, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :931-933

[8]

RESNICK DJ, 1988, SPIE, V923, P296

[9] POINT EXPOSURE DISTRIBUTION MEASUREMENTS FOR PROXIMITY CORRECTION IN ELECTRON-BEAM LITHOGRAPHY ON A SUB-100 NM SCALE [J].

RISHTON, SA ;

KERN, DP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :135-141

[10]

ROELOFS BJG, 1988, SPIE, V923, P274

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