GHOST PROXIMITY CORRECTION TECHNIQUE - ITS PARAMETERS, LIMITATIONS, AND PROCESS LATITUDE

被引:7
作者
KOSTELAK, RL
KUNG, EH
THOMSON, MGR
VAIDYA, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期
关键词
D O I
10.1116/1.583972
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:448 / 455
页数:8
相关论文
共 16 条
[1]   PROXIMITY EFFECT DEPENDENCE ON SUBSTRATE MATERIAL [J].
AIZAKI, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1726-1733
[2]   EBES4 - A NEW ELECTRON-BEAM EXPOSURE SYSTEM [J].
ALLES, DS ;
BIDDICK, CJ ;
BRUNING, JH ;
CLEMENS, JT ;
COLLIER, RJ ;
GERE, EA ;
HARRIOTT, LR ;
LEONE, F ;
LIU, R ;
MULROONEY, TJ ;
NIELSEN, RJ ;
PARAS, N ;
RICHMAN, RM ;
ROSE, CM ;
ROSENFELD, DP ;
SMITH, DEA ;
THOMSON, MGR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :47-52
[3]  
DALZOTTO B, 1985, MICROCIRCUIT ENG 85, P105
[4]  
Greeneich JS., 1980, ELECT BEAM TECHNOLOG, P59
[5]   EBES - PRACTICAL ELECTRON LITHOGRAPHIC SYSTEM [J].
HERRIOTT, DR ;
COLLIER, RJ ;
ALLES, DS ;
STAFFORD, JW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :385-392
[6]  
KUNG EH, 1987, SPIE, V773, P171
[7]   MONTE-CARLO SIMULATION OF SPATIALLY DISTRIBUTED BEAMS IN ELECTRON-BEAM LITHOGRAPHY [J].
KYSER, DF ;
VISWANATHAN, NS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1305-1308
[8]  
LIN BJ, 1983, INTRO MICROLITHOGRAP, P287
[9]   MEASUREMENTS OF ELECTRON RANGE AND SCATTERING IN HIGH-VOLTAGE E-BEAM LITHOGRAPHY [J].
MANKIEWICH, PM ;
JACKEL, LD ;
HOWARD, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :174-176
[10]   HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J].
MORAN, JM ;
MAYDAN, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1620-1624